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Proceedings Paper

Electron bombardment radiation damage in Tektronix CCDs
Author(s): Alice L. Reinheimer
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Paper Abstract

Radiation hardness is critical for charge coupled devices used in the electron bombarded mode. Two types of damage in CCDs are caused by keV electron irradiation: a flatband voltage shift and an increase in interface state density. A flatband voltage shift is more catastrophic to device performance than an increase in interface state density, especially for MPP devices. The type of radiation damage a CCD is susceptible to depends on the process used to fabricate it. Results are presented which show that Tektronix CCDs fabricated with a straight silicon dioxide gate insulator exhibit an increase in interface state density but little if any flatband voltage shift.

Paper Details

Date Published: 12 July 1993
PDF: 7 pages
Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); doi: 10.1117/12.148591
Show Author Affiliations
Alice L. Reinheimer, Tektronix, Inc. (United States)


Published in SPIE Proceedings Vol. 1900:
Charge-Coupled Devices and Solid State Optical Sensors III
Morley M. Blouke, Editor(s)

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