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Proceedings Paper

Raman properties stoichiometry and the hardness of hydrogenated amorphous carbon
Author(s): Matthias C. Krantz; David D. Saperstein; Richard L. White
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Paper Abstract

Results of a systematic investigation of the Raman, hardness, and resistivity properties of sputtered amorphous carbon films on silicon substrates for hydrogen stoichiometries between 14% and 39% are presented. Frequency shift and line broadening effects of the Raman active graphite-like vibrations are consistent with a model of both harness and strain present in the amorphous network being independently controlled by the unprotonated sp3 carbon-carbon bonding fraction and the hydrogen concentration. Comparison to constraint counting models for covalent random networks indicates that the hardness of hydrogenated amorphous carbon follows the degree of network strain. We find no evidence for phonon confinement effects in micro crystals consistent with a random network structure without predominating microcrystals. Resistivity data indicate that the vibrational properties are largely independent of strong variations in the electronic properties with stoichiometry.

Paper Details

Date Published: 2 July 1993
PDF: 12 pages
Proc. SPIE 1857, Lasers and Optics for Surface Analysis, (2 July 1993); doi: 10.1117/12.148512
Show Author Affiliations
Matthias C. Krantz, IBM Corp. (United States)
David D. Saperstein, IBM Corp. (United States)
Richard L. White, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 1857:
Lasers and Optics for Surface Analysis
Mattanjah S. de Vries, Editor(s)

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