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Proceedings Paper

Laser ablation/ionization analysis of trace impurities from bulk materials
Author(s): Sergey Sergeivich Alimpiev; M. E. Belov; Sergey M. Nikiforov
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Paper Abstract

Laser ablation followed by resonant-enhanced multiphoton ionization combined with RETOF mass-spectrometry was used for trace element analysis of industry-made semiconductor samples and organic compounds. Ablated neutral species entered an ion extraction system where they were resonantly excited via intermediate atomic levels and ionized by ionization lasers, accelerated to 1.7 keV energy, reflected by a gridless ion mirror and detected by a double-microchannel plate assembly. Detection limit down to 1 ppb was achieved for the number of trace elements (Fe, B, Cr, Al).

Paper Details

Date Published: 2 July 1993
PDF: 10 pages
Proc. SPIE 1857, Lasers and Optics for Surface Analysis, (2 July 1993); doi: 10.1117/12.148511
Show Author Affiliations
Sergey Sergeivich Alimpiev, General Physics Institute (Russia)
M. E. Belov, General Physics Institute (Russia)
Sergey M. Nikiforov, General Physics Institute (Russia)

Published in SPIE Proceedings Vol. 1857:
Lasers and Optics for Surface Analysis
Mattanjah S. de Vries, Editor(s)

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