Share Email Print
cover

Proceedings Paper

Intracavity and resonant external cavity laser frequency doubling using semiconductor heterostructures
Author(s): Siegfried Janz; Hongxing Dai; F. Chatenoud; Michael M. Dion; Richard J. F. Normandin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Optical second-harmonic (SH) generation in nonlinear semiconductors can be used to convert infrared radiation from semiconductor laser sources to visible light. The high incident light intensities and spatial modulation of the linear and nonlinear optical properties occurring in AlxGa1-xAs vertical cavity heterostructures can lead to SH generation efficiencies many orders of magnitude larger than possible homogeneous GaAs. SH generation in vertical cavity heterostructures is analyzed using a model incorporating multilayer reflections and spatially varying nonlinear sources.

Paper Details

Date Published: 23 July 1993
PDF: 8 pages
Proc. SPIE 1852, Nonlinear Optical Properties of Advanced Materials, (23 July 1993); doi: 10.1117/12.148453
Show Author Affiliations
Siegfried Janz, National Research Council Canada (Canada)
Hongxing Dai, National Research Council Canada (Canada)
F. Chatenoud, National Research Council Canada (Canada)
Michael M. Dion, National Research Council Canada (Canada)
Richard J. F. Normandin, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 1852:
Nonlinear Optical Properties of Advanced Materials
Shahab Etemad, Editor(s)

© SPIE. Terms of Use
Back to Top