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Proceedings Paper

Free-boundary problems arising in processing of semiconductors
Author(s): Avner Friedman
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Paper Abstract

In this work we discuss two free boundary problems which arise in semiconductor processing. The first problem is concerned with deposition of titanium silicide over a wafer, a process which results in three layers of chemicals: Ti, TiSi and TiSi2 and three free-boundary interfaces. The second problem is concerned with the growth of loop dislocations in crystal, which develop as a result of implanting impurities and rapid thermal annealing. Existence results and properties of the solutions are discussed.

Paper Details

Date Published: 22 July 1993
PDF: 9 pages
Proc. SPIE 1919, Smart Structures and Materials 1993: Mathematics in Smart Structures, (22 July 1993); doi: 10.1117/12.148427
Show Author Affiliations
Avner Friedman, Univ. of Minnesota/Twin Cities (United States)

Published in SPIE Proceedings Vol. 1919:
Smart Structures and Materials 1993: Mathematics in Smart Structures
H. Thomas Banks, Editor(s)

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