Share Email Print
cover

Proceedings Paper

Free-boundary problems arising in processing of semiconductors
Author(s): Avner Friedman
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this work we discuss two free boundary problems which arise in semiconductor processing. The first problem is concerned with deposition of titanium silicide over a wafer, a process which results in three layers of chemicals: Ti, TiSi and TiSi2 and three free-boundary interfaces. The second problem is concerned with the growth of loop dislocations in crystal, which develop as a result of implanting impurities and rapid thermal annealing. Existence results and properties of the solutions are discussed.

Paper Details

Date Published: 22 July 1993
PDF: 9 pages
Proc. SPIE 1919, Smart Structures and Materials 1993: Mathematics in Smart Structures, (22 July 1993); doi: 10.1117/12.148427
Show Author Affiliations
Avner Friedman, Univ. of Minnesota/Twin Cities (United States)


Published in SPIE Proceedings Vol. 1919:
Smart Structures and Materials 1993: Mathematics in Smart Structures
H. Thomas Banks, Editor(s)

© SPIE. Terms of Use
Back to Top