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Proceedings Paper

Intrinsic response times of double-barrier resonant tunneling diodes at terahertz frequencies
Author(s): Jeff S. Scott; Jann P. Kaminski; S. James Allen; David H. Chow; Mark Lui
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Paper Abstract

We have measured the broad band terahertz response of state of the art InGaAs/AlAs and InAs/AlSb resonant tunneling diodes from 180 GHz to 3.6 THz using the free-electron lasers at UCSB. A tungsten whisker antenna in a conventional probe station is used to couple the far- infrared radiation into the device. Normalizing the resonant tunneling response with the off- resonant response allows us to circumvent the much slower RC time constant of the device and consequently enables a measurement of the relaxation time due to the quantum inductance.

Paper Details

Date Published: 14 July 1993
PDF: 4 pages
Proc. SPIE 1854, Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science, (14 July 1993); doi: 10.1117/12.148045
Show Author Affiliations
Jeff S. Scott, Univ. of California/Santa Barbara (United States)
Jann P. Kaminski, Univ. of California/Santa Barbara (United States)
S. James Allen, Univ. of California/Santa Barbara (United States)
David H. Chow, Hughes Research Labs. (United States)
Mark Lui, Hughes Research Labs. (United States)


Published in SPIE Proceedings Vol. 1854:
Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science
H. Alan Schwettman, Editor(s)

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