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Proceedings Paper

Picosecond grating dynamics in GaAs and CdTe at 1.064 um
Author(s): N. Brugel; P. Carnus; Michel Pugnet; Jacques H. Collet; Laurent Nardo; J. L. Iehl
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Paper Abstract

Laser-induced transient gratings generated by picosecond pulses at 1.064 micrometers in GaAs and CdTe samples were used to diffract a picosecond probe pulse in the degenerate-four-wave- mixing geometry. Pulse and probe experiments performed using the same experimental set-up allowed us to measure the free-carrier lifetime. The ambipolar diffusion coefficient D was then determined by using only one laser-material geometrical configuration. In semi-insulating GaAs:Cr and CdTe:W, gratings persisted for more than one nanosecond and could be partially erased using a homogeneous picosecond pulse, the energy of which was one quarter of the writing energy. We present a model which explains these results.

Paper Details

Date Published: 28 June 1993
PDF: 8 pages
Proc. SPIE 1807, Photonic Switching, (28 June 1993); doi: 10.1117/12.147927
Show Author Affiliations
N. Brugel, Lab. de Physique des Solides/INSA (France)
P. Carnus, Lab. de Physique des Solides/INSA (France)
Michel Pugnet, Lab. de Physique des Solides/INSA (France)
Jacques H. Collet, Lab. de Physique des Solides/INSA (France)
Laurent Nardo, Lab. de Physique des Solides/INSA (France)
J. L. Iehl, Lab. de Physique des Solides/INSA (France)


Published in SPIE Proceedings Vol. 1807:
Photonic Switching

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