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Proceedings Paper

Electroabsorptive resonator-free self-electro-optic effect devices
Author(s): Boris S. Ryvkin
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Paper Abstract

It is shown that very effective ERF SEED can be expected for II-VI semiconductor heterostructures with a homogeneous electroabsorptive narrow-gap layer. Some principles for realization of high contrast ERF SEED are presented.

Paper Details

Date Published: 28 June 1993
PDF: 6 pages
Proc. SPIE 1807, Photonic Switching, (28 June 1993); doi: 10.1117/12.147921
Show Author Affiliations
Boris S. Ryvkin, Technische Univ. Muenchen (FRG) and A.F. Ioffe Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 1807:
Photonic Switching
Andrey M. Goncharenko; Fedor V. Karpushko; George V. Sinitsyn; Sergey P. Apanasevich, Editor(s)

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