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Proceedings Paper

Ultraviolet laser deposition of doped PbTe thin films
Author(s): Ludmila N. Vereshchagina; Alexander N. Zherikhin; Victor N. Bagratashvili; Alexander P. Sviridov; Sergey Sergeivich Alimpiev; Sergey M. Nikiforov; Victor N. Shevchenko; V. V. Mlinsky; Dmitriy R. Khokhlov; Ivan I. Ivanchik; A. M. Gas'kov
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Paper Abstract

The possibilities and advantages of UV-laser ablation technique for deposition of doped PbTe thin films are discussed. To understand the effects of experimental parameters on layer formation the stages of laser sputtering of the target and film growth were investigated. Method of laser ionization RETOF mass spectrometry was used to obtain the energy distribution and chemical nature of evaporated particles as a function of wavelength and laser radiation power. The influence of experimental parameters on the deposited film thickness, stoichiometry and crystalline perfection was checked. The dependence of doped PbTe films photoelectrical properties on the experimental parameters.

Paper Details

Date Published: 24 June 1993
PDF: 11 pages
Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); doi: 10.1117/12.147626
Show Author Affiliations
Ludmila N. Vereshchagina, Research Ctr. for Technological Lasers (Russia)
Alexander N. Zherikhin, Research Ctr. for Technological Lasers (Russia)
Victor N. Bagratashvili, Research Ctr. for Technological Lasers (Russia)
Alexander P. Sviridov, Research Ctr. for Technological Lasers (Russia)
Sergey Sergeivich Alimpiev, General Physics Institute (Russia)
Sergey M. Nikiforov, General Physics Institute (Russia)
Victor N. Shevchenko, General Physics Institute (Russia)
V. V. Mlinsky, General Physics Institute (Russia)
Dmitriy R. Khokhlov, Moscow State Univ. (Russia)
Ivan I. Ivanchik, Moscow State Univ. (Russia)
A. M. Gas'kov, Moscow State Univ. (Russia)

Published in SPIE Proceedings Vol. 1856:
Laser Radiation Photophysics
Bodil Braren; Mikhail N. Libenson, Editor(s)

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