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Proceedings Paper

Physical mechanisms of light-induced polarization effects "on reflection" in GaAs
Author(s): Dmitri Yu. Paraschuk; Nikolay I. Zheludev; Vitalyi E. Gusev
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Paper Abstract

Non-steady-state polarization response of photoexcited GaAs has been investigated with the specular micropolarimetry particularly in crystals with laser induced damages of near surface layer. Physical models of the polarization response in the excited GaAs due to electron-hole plasma photogeneration are discussed: the nonlocal electron-hole plasma model the optically induced piezogyrotropy the electrooptic effect in the Dember field. 1.

Paper Details

Date Published: 24 June 1993
PDF: 9 pages
Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); doi: 10.1117/12.147623
Show Author Affiliations
Dmitri Yu. Paraschuk, Moscow State Univ. (Russia)
Nikolay I. Zheludev, Univ. of Southampton (United Kingdom)
Vitalyi E. Gusev, Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 1856:
Laser Radiation Photophysics
Bodil Braren; Mikhail N. Libenson, Editor(s)

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