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Proceedings Paper

Laser-induced semiconductor-metal phase transition and periodic structure formation on silicon surface
Author(s): Oleg P. Gashkov; Mikhail N. Libenson; Vladimir S. Makin; Vladimir V. Trubaev
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Paper Abstract

The regular structure formation on a silicon surface under the millisecond pulse of linear-polarized Nd-laser light irradiation has been studied experimentally. The surface structures induced by the interference of incident wave and surface electromagnetic waves and also the double-period structures with periods d — 2-3 microns were observed in the nonhomogeneous melting regime. The double-period structures formation was explained by polaritonic mechanism and was due to a nonlinear absorptance changes in semiconductor-metal phase transition.

Paper Details

Date Published: 24 June 1993
PDF: 4 pages
Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); doi: 10.1117/12.147622
Show Author Affiliations
Oleg P. Gashkov, S. I. Vavilov State Optical Institute (Russia)
Mikhail N. Libenson, S. I. Vavilov State Optical Institute (Russia)
Vladimir S. Makin, S. I. Vavilov State Optical Institute (Russia)
Vladimir V. Trubaev, S. I. Vavilov State Optical Institute (Russia)


Published in SPIE Proceedings Vol. 1856:
Laser Radiation Photophysics
Bodil Braren; Mikhail N. Libenson, Editor(s)

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