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Proceedings Paper

Laser-induced phase transitions in III-V compounds
Author(s): Pavel K. Kashkarov; Viktor Yu. Timoshenko; N. G. Chechenin; Alexander N. Obraztsov
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Paper Abstract

The laser induced phase transitions in III-V compounds have been investigated by time resolved reflectivity. Raman scattering and Rutherford Back scattering techniques. It has been shown that an intensive evaporation of V-component from the laser melted crystal can initiate the solidification of the melt directly from the surface. This layer has a polycrystalline structure with (110) preferred orientation and is rather defective. The defect concentration is maximal at the border where the recrystallization front moving from the surface and that moving from the substrate are meeting.

Paper Details

Date Published: 24 June 1993
PDF: 6 pages
Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); doi: 10.1117/12.147619
Show Author Affiliations
Pavel K. Kashkarov, Moscow State Univ. (Russia)
Viktor Yu. Timoshenko, Moscow State Univ. (Russia)
N. G. Chechenin, Moscow State Univ. (Russia)
Alexander N. Obraztsov, Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 1856:
Laser Radiation Photophysics
Bodil Braren; Mikhail N. Libenson, Editor(s)

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