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Proceedings Paper

Formation of reversible and irreversible structural defects on silicon surface under laser-pulsed influence
Author(s): Alexander F. Banishev; L. V. Novikova; M. M. Novikov
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Paper Abstract

The processes of the defects and the periodic structures formation on the silicon surface under the pulsed laser influence ((lambda) equals 1.06 micrometers , (tau) approximately equals 1.5 msec, EL approximately equals 3 J) have been studied. It has been shown that (1) at the energy densities FL thres (Fthres is the threshold energy density), formation of reversible defects took place, and at FL Fthres, irreversible defects appeared, (2) local melting of the surface started within the region where the defects formation occurred, (3) the periodic structures formation strongly depended on the mutual orientation vector of the crystallographic axes and the laser beam polarization.

Paper Details

Date Published: 24 June 1993
PDF: 7 pages
Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); doi: 10.1117/12.147618
Show Author Affiliations
Alexander F. Banishev, Research Ctr. of Technological Lasers (Russia)
L. V. Novikova, Research Ctr. of Technological Lasers (Russia)
M. M. Novikov, Research Ctr. of Technological Lasers (Russia)

Published in SPIE Proceedings Vol. 1856:
Laser Radiation Photophysics
Bodil Braren; Mikhail N. Libenson, Editor(s)

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