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Proceedings Paper

1.3-um InGaAsP/InP buried-crescent lasers with narrow spread of threshold currents
Author(s): Ching Long Jiang; Robert J. Miller; Mark Soler; Maria D. Ferreira; Keith Wilder; Eugene A. Imhoff; John D. Kulick; Randy Wilson
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Paper Abstract

A narrow spread of threshold currents from 10.8 to 12.8 mA across a wafer has been demonstrated. To the best of our knowledge, this is the narrowest spread of threshold currents that has ever been reported for non-broad-area semiconductor lasers. From experimental results, it seems that the active width is probably the most important parameter in controlling the spread of threshold currents.

Paper Details

Date Published: 24 June 1993
PDF: 9 pages
Proc. SPIE 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices, (24 June 1993); doi: 10.1117/12.147598
Show Author Affiliations
Ching Long Jiang, AMP Lytel Div. (United States)
Robert J. Miller, AMP Lytel Div. (United States)
Mark Soler, AMP Lytel Div. (United States)
Maria D. Ferreira, AMP Lytel Div. (United States)
Keith Wilder, AMP Lytel Div. (United States)
Eugene A. Imhoff, AMP Lytel Div. (United States)
John D. Kulick, AMP Lytel Div. (United States)
Randy Wilson, AMP Lytel Div. (United States)

Published in SPIE Proceedings Vol. 1851:
Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices
Henryk Temkin, Editor(s)

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