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Proceedings Paper

Fabrication processes for GaAs-based high-power diode lasers
Author(s): Kathleen Meehan; Linda S. Heath; Jeannie E. Williams; Tien Yang Wang; Dana M. Beyea; Aland K. Chin; Wolfgang Stutius
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Paper Abstract

GaAs-based, edge-emitting diode lasers have become important light sources for numerous applications, e.g., in ophthalmology and dentistry, pumping of solid-state lasers, and printing on thermal media. The general performance requirements for these devices are high brightness, high reliability, stable optical-characteristics, and low system-cost to performance ratio. Device processing procedures such as dry etching, anodic oxidation, anti-reflection coatings, ion-implantation, and epitaxial growth on non-planar substrates impact the operation of the laser, both positively as well as negatively. The effect of these fabrication procedures on device reliability is discussed where applicable.

Paper Details

Date Published: 24 June 1993
PDF: 12 pages
Proc. SPIE 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices, (24 June 1993); doi: 10.1117/12.147595
Show Author Affiliations
Kathleen Meehan, Polaroid Corp. (United States)
Linda S. Heath, Polaroid Corp. (United States)
Jeannie E. Williams, Polaroid Corp. (United States)
Tien Yang Wang, Polaroid Corp. (United States)
Dana M. Beyea, Polaroid Corp. (United States)
Aland K. Chin, Polaroid Corp. (United States)
Wolfgang Stutius, Polaroid Corp. (United States)

Published in SPIE Proceedings Vol. 1851:
Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices
Henryk Temkin, Editor(s)

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