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Proceedings Paper

Molecular beam epitaxy technology for selective area embedded InGaAs layers in InP substrates
Author(s): Alexandros Georgakilas; Aristos Christou; K. Zekentes; K. Tsagaraki; G. Halkias; Pierre Lefebvre; Jacques Allegre
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Paper Abstract

The selective area MBE deposition of InGaAs in InP substrates is reported. Successful selective growth of InGaAs in pre-ion etched windows of InP has been achieved utilizing a SILOX mask and lift-off techniques of polycrystalline InGaAs field layers. The optical quality of these epitaxial InGaAs windows was comparable to material deposited on non-patterned InP. An optimized pre-growth heat treatment of InP was very crucial in order to achieve the smooth InGaAs surface morphologies and excellent optical properties. Finally, no significant irregularities were observed at the InGaAs window edges, the alloy composition appeared uniform in the entire window areas and the incorporation of impurities from the SILOX was minimized.

Paper Details

Date Published: 24 June 1993
PDF: 11 pages
Proc. SPIE 1851, Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices, (24 June 1993); doi: 10.1117/12.147593
Show Author Affiliations
Alexandros Georgakilas, Univ. of Maryland/College Park (United States)
Aristos Christou, Univ. of Maryland/College Park (United States)
K. Zekentes, Foundation for Research and Technology-Hellas (Greece)
K. Tsagaraki, Foundation for Research and Technology-Hellas (Greece)
G. Halkias, Foundation for Research and Technology-Hellas (Greece)
Pierre Lefebvre, Univ. Montpellier II (France)
Jacques Allegre, Univ. Montpellier II (France)


Published in SPIE Proceedings Vol. 1851:
Processing and Packaging of Semiconductor Lasers and Optoelectronic Devices
Henryk Temkin, Editor(s)

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