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Proceedings Paper

Nonequilibrium behavior and defect diffusion in laser heating of semiconductors
Author(s): Woei-Yun Ho; Chun Chi Ma; Rodger M. Walser; Michael F. Becker
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Paper Abstract

A new theoretical framework for modeling the nonlinear laser heating of semiconductors is presented by incorporating the dynamical behavior of semiconductors; the temperature-carrier coupling, the generation and recombination of defects, the diffusion of defects, the diffusion of impurities by defect-dopant pair mechanism, and chemical reaction between species. In this study, we apply our model to n-type silicon irradiated by a nanosecond pulsed Nd:YAG laser. The dynamical evolution of laser-semiconductor interaction process is examined by calculation of carrier, defect, and impurity concentration profiles.

Paper Details

Date Published: 24 June 1993
PDF: 12 pages
Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); doi: 10.1117/12.147420
Show Author Affiliations
Woei-Yun Ho, Univ. of Texas/Austin (United States)
Chun Chi Ma, Univ. of Texas/Austin (United States)
Rodger M. Walser, Univ. of Texas/Austin (United States)
Michael F. Becker, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 1848:
24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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