Share Email Print
cover

Proceedings Paper

Unoccupied surface states on GaP(111) surfaces
Author(s): Alex V. Hamza
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Unoccupied surface electronic states have been observed on GaP(111) surfaces by momentum- resolved inverse photoemission spectroscopy (IPES). On the GaP(111):P surface an unoccupied state is detected 1.2 eV above the Fermi level. This state is associated with Ga surface adatoms, since prolonged exposure to the incident electron beam removes this IPES feature and reduces the Ga/P ratio in Auger electron spectrum. Preferential photon absorption at 2.27 eV by this surface can be explained by promotion of an electron from the valence band maximum to the unoccupied surface state detected in this work.

Paper Details

Date Published: 24 June 1993
PDF: 6 pages
Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); doi: 10.1117/12.147419
Show Author Affiliations
Alex V. Hamza, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 1848:
24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

© SPIE. Terms of Use
Back to Top