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Proceedings Paper

Absorption and damage thresholds of low-defect-density hafnia deposited with activated oxygen
Author(s): Robert Chow; Steven Falabella; Gary E. Loomis; Frank Rainer; Christopher J. Stolz; Mark R. Kozlowski
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Paper Abstract

Motivation for this work included observations at Lawrence Livermore National Laboratory and elsewhere of a correlation between increasing laser damage thresholds (DT) and both decreasing nodular-defect density and absorption of coatings. We reduced the nodular-defect densities by a factor of over 4x in hafnia (HfO2) coatings deposited by reactive e-beam evaporation from a Hf target source. In order to increase the metal oxidation kinetics at the coated surface, Hf was e-beam deposited reactively with O2 activated by a (mu) -wave discharge. The effect of using activated O2 during the evaporation of a HfO2 target source was also evaluated. A series of HfO2 layers were made with various conditions; we alternated between two (mu) -wave configurations, Hf and HfO2 targets and two reactive O2 pressures. Laser DTs (1064 nm - 10 ns pulses), absorption (at 511 nm), and nodular- defect densities from these coatings are reported. The DT correlated inversely with the coating absorption.

Paper Details

Date Published: 24 June 1993
PDF: 12 pages
Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); doi: 10.1117/12.147409
Show Author Affiliations
Robert Chow, Lawrence Livermore National Lab. (United States)
Steven Falabella, Lawrence Livermore National Lab. (United States)
Gary E. Loomis, Lawrence Livermore National Lab. (United States)
Frank Rainer, Lawrence Livermore National Lab. (United States)
Christopher J. Stolz, Lawrence Livermore National Lab. (United States)
Mark R. Kozlowski, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 1848:
24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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