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Proceedings Paper

Correlation of damage threshold and surface geometry of nodular defects on HR coatings as determined by in-situ atomic force microscopy
Author(s): Michael C. Staggs; Mark R. Kozlowski; Wigbert J. Siekhaus; Mehdi Balooch
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Paper Abstract

Atomic force microscopy (AFM) was used to determine in-situ the correlation between the surface dimensions of defects in dielectric multilayer optical coatings and their susceptibility to damage by pulsed laser illumination. The primary surface defects studied were micrometers -scale domes associated with the classic nodule defect. The optical film studied was a highly reflective dielectric multilayer consisting of pairs of alternating HfO2 and SiO2 layers of quarter wave thickness at 1.06 micrometers . Nodule defect height and width dimensions were measured prior to laser illumination on two different samples. Correlation between these dimensions supported a simple model for the defect geometry. Defects with high nodule heights (> 0.6 micrometers ) were found to be most susceptible to laser damage over a range of fluences between 0 - 35 J/cm2 (1.06 micrometers , 10 ns, and 1/e2 diam. of 1.3 mm). Crater defects, formed by nodules ejected from the coating prior to illumination, were also studied. None of the crater defects damaged when illuminated over the same range of fluences that the nodule defects were subjected to.

Paper Details

Date Published: 24 June 1993
PDF: 9 pages
Proc. SPIE 1848, 24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992, (24 June 1993); doi: 10.1117/12.147402
Show Author Affiliations
Michael C. Staggs, Lawrence Livermore National Lab. (United States)
Mark R. Kozlowski, Lawrence Livermore National Lab. (United States)
Wigbert J. Siekhaus, Lawrence Livermore National Lab. (United States)
Mehdi Balooch, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 1848:
24th Annual Boulder Damage Symposium Proceedings -- Laser-Induced Damage in Optical Materials: 1992
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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