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Proceedings Paper

Integration of GaAs LEDs with silicon circuits by epitaxial lift-off
Author(s): Ali Ersen; Eli Yablonovitch; Tom J. Gmitter; Itzhak Schnitzer
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Paper Abstract

Epitaxial liftoff has emerged as a viable technique to integrate GaAs with silicon. The technique relies on the separation of a thin epi-GaAs film from its substrate followed by direct bonding of the thin film to a silicon substrate. The silicon substrate has to meet certain planarity and smoothness conditions in order to obtain high quality bonding. Unfortunately, processed silicon IC chips do not satisfy these conditions. In this paper, we report on the results of two different planarization techniques, plasma etch back and chemical mechanical polishing, to integrate GaAs LEDs with silicon circuits using epitaxial liftoff. A 4 by 8 array of GaAs LEDs have been integrated with silicon driver circuits using plasma etch back. We also have lifted off areas as large as 500 mm2 and bonded them on five inch device wafers by chemical mechanical polishing.

Paper Details

Date Published: 1 July 1993
PDF: 12 pages
Proc. SPIE 1849, Optoelectronic Interconnects, (1 July 1993); doi: 10.1117/12.147102
Show Author Affiliations
Ali Ersen, Bell Communications Research (United States)
Eli Yablonovitch, Bell Communications Research (United States)
Tom J. Gmitter, Bell Communications Research (United States)
Itzhak Schnitzer, Bell Communications Research (United States)

Published in SPIE Proceedings Vol. 1849:
Optoelectronic Interconnects
Ray T. Chen, Editor(s)

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