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Proceedings Paper

All-MOCVD-grown BH laser on P-InP substrates
Author(s): Tadashi Nishimura; E. Ishimura; Yasuo Nakajima; Hitoshi Tada; T. Kimura; Y. Ohkura; Katsuhiko Goto; Etsuji Omura; Masao Aiga
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Paper Abstract

A very low cw threshold current of 2.5 mA ( 25 degree(s)C) and 8.0 mA ( 80 degree(s)C) with high reliability has been realized in the all-MOCVD grown BH lasers on p-InP substrates. A strained MQW active layer of 1.3 micrometers wavelength and the precise carrier confinement buried structure by MOCVD is employed for the BH lasers. The excellent potential of long lifetime of the all-MOCVD grown laser has also been confirmed. After the high temperature and the high current (100 degree(s)C, 200 mA) aging test, no significant degradation is observed which is comparable with the well-established LPE grown lasers. The BH laser is also operating stably over 3700 hrs under the APC condition of 50 degree(s)C, 10 mW. Finally, an extremely uniform 10-element all-MOCVD grown LD array is demonstrated, which has the threshold current uniformity of 2.4 +/- 0.1 mA ( 25 degree(s)C) and 9.2 +/- 0.2 mA ( 80 degree(s)C). The growth mechanism in the MOCVD is also described.

Paper Details

Date Published: 1 July 1993
PDF: 8 pages
Proc. SPIE 1849, Optoelectronic Interconnects, (1 July 1993); doi: 10.1117/12.147101
Show Author Affiliations
Tadashi Nishimura, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
E. Ishimura, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Yasuo Nakajima, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Hitoshi Tada, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
T. Kimura, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Y. Ohkura, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Katsuhiko Goto, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Etsuji Omura, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Masao Aiga, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)


Published in SPIE Proceedings Vol. 1849:
Optoelectronic Interconnects
Ray T. Chen, Editor(s)

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