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Proceedings Paper

Nonradiative-radiative recombination and trapping processes in the InGaAs/GaAs single quantum wells
Author(s): Shixiong Qian; Jie Song; Yufen Li; Wen-Ji Peng; Zhenxin Yu
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Paper Abstract

By using the time-resolved photoluminescence technique, we have studied the temporal properties of the photoluminescence from several InGaAs/GaAs single quantum well samples at 77 K. The radiative recombination, the nonradiative recombination and the trapping processes have been investigated for these samples. From the excitation power dependence and temperature dependence measurement, the radiative and the nonradiative lifetime of the carriers and the excitons in these quantum well samples have been obtained which reveal the great influence of the excitation power, temperature and the parameters of the well on these recombination processes.

Paper Details

Date Published: 17 June 1993
PDF: 7 pages
Proc. SPIE 1861, Ultrafast Pulse Generation and Spectroscopy, (17 June 1993); doi: 10.1117/12.147069
Show Author Affiliations
Shixiong Qian, Fudan Univ. (China)
Jie Song, Fudan Univ. (Japan)
Yufen Li, Fudan Univ. (China)
Wen-Ji Peng, Zhongshan Univ. (China)
Zhenxin Yu, Zhongshan Univ. (China)


Published in SPIE Proceedings Vol. 1861:
Ultrafast Pulse Generation and Spectroscopy
Timothy R. Gosnell; Antoinette J. Taylor; Keith A. Nelson; Michael C. Downer, Editor(s)

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