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Proceedings Paper

Femtosecond ellipsometry and surface second-harmonic probes of Ge, Si1-xGex, Si, and diamond
Author(s): Jerry I. Dadap Jr.; Heung-Ro Choo; X. F. Hu; Qing Deng; Michael C. Downer
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Paper Abstract

We demonstrate two complementary techniques: femtosecond ellipsometry and surface second harmonic generation, for characterization and diagnostics of semiconductor epilayers using unamplified femtosecond laser sources. Through femtosecond ellipsometry, we obtained the time-resolved change in the real and imaginary parts of the index of refraction in relaxed and strained Si1-xGex alloys. Through surface second harmonic generation in conjunction with the Kerr Lens mode-locked (KLM) Ti:Sapphire laser, we obtained surface second harmonic signals in Si(100) and Diamond(111) with an unprecedented signal-to-noise ratio.

Paper Details

Date Published: 17 June 1993
PDF: 17 pages
Proc. SPIE 1861, Ultrafast Pulse Generation and Spectroscopy, (17 June 1993); doi: 10.1117/12.147062
Show Author Affiliations
Jerry I. Dadap Jr., Univ. of Texas/Austin (United States)
Heung-Ro Choo, Univ. of Texas/Austin (South Korea)
X. F. Hu, Univ. of Texas/Austin (United States)
Qing Deng, Univ. of Texas/Austin (United States)
Michael C. Downer, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 1861:
Ultrafast Pulse Generation and Spectroscopy
Timothy R. Gosnell; Antoinette J. Taylor; Keith A. Nelson; Michael C. Downer, Editor(s)

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