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Proceedings Paper

Femtosecond optical rectification from semiconductor surfaces and quantum wells
Author(s): Shun-Lien Chuang
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Paper Abstract

A theoretical model based on the nonlinear optical rectification at semiconductor surfaces and quantum wells is reviewed. The theory explains the experimental observations including the crystal orientation dependence of the terahertz signal on the crystal growth axis. Interesting properties, such as (1) the polarization of the radiated electromagnetic pulse is mostly in the plane of incidence (TM polarization), (2) the polarity of the radiation field changes in sign from an n-type doped sample to a p-type doped sample, (3) the radiated field decreases with increasing temperature, (4) the radiation field decreases with increasing doping concentration, and (5) the frequency response of the radiation field peaks near the terahertz range, can all be explained using the optical rectification theory. We also discuss how the same theory can explain the experimentally observed terahertz signals from coupled quantum-well structures. The theory shows that both optically rectified signals and quantum beats are generated.

Paper Details

Date Published: 17 June 1993
PDF: 7 pages
Proc. SPIE 1861, Ultrafast Pulse Generation and Spectroscopy, (17 June 1993); doi: 10.1117/12.147051
Show Author Affiliations
Shun-Lien Chuang, Univ. of Illinois/Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 1861:
Ultrafast Pulse Generation and Spectroscopy
Timothy R. Gosnell; Antoinette J. Taylor; Keith A. Nelson; Michael C. Downer, Editor(s)

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