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Proceedings Paper

Diode pumping of LaxNd1-xMgAl11O19 lasers
Author(s): Jun Xu; Guangzhao Wu; Yafang Shen; Xinmin Zhang; Xiurong Zhang; Shaoting Gu
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Paper Abstract

Compared to other Nd3+ doped materials such as YAG:Nd3+, YAP:Nd3+, and YLF:Nd3+, crystal LaxNd1-xMgAl11O19 (LNA) has relatively much higher Nd concentration, long upper state lifetime, and large absorption bandwidths. LNA crystals have been pumped by laser diode arrays emitting around 800 nm. High-quality LNA crystals for this purpose have been grown.

Paper Details

Date Published: 16 June 1993
PDF: 6 pages
Proc. SPIE 1865, Diode Pumping of Average-Power Solid State Lasers, (16 June 1993); doi: 10.1117/12.146936
Show Author Affiliations
Jun Xu, Shanghai Institute of Optics and Fine Mechanics (China)
Guangzhao Wu, Shanghai Institute of Optics and Fine Mechanics (China)
Yafang Shen, Shanghai Institute of Optics and Fine Mechanics (China)
Xinmin Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
Xiurong Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
Shaoting Gu, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 1865:
Diode Pumping of Average-Power Solid State Lasers
Georg F. Albrecht; Raymond J. Beach; Stephan P. Velsko, Editor(s)

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