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Proceedings Paper

High-brightness unstable resonator semiconductor lasers
Author(s): Richard K. DeFreez; Zhuoyu Bao; P. D. Carleson; Marc K. Felisky; Craig C. Largent
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Paper Abstract

Based on a combination of high quality materials, advanced design considerations, and focused-ion-beam micromachining, unstable resonator semiconductor lasers (URSLs) have been fabricated in several material systems. GaAs/AlGaAs, InGaAs/GaAs, and GaInP/AlGaInP URSLs fabricated by FIBM have achieved brightness values of 100 to 400 MW/cm2/Sr which is one to two orders of magnitude greater than the brightness of commercial semiconductor lasers produced from the same material systems and with comparable dimensions.

Paper Details

Date Published: 16 June 1993
PDF: 9 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146934
Show Author Affiliations
Richard K. DeFreez, Oregon Graduate Institute (United States)
Zhuoyu Bao, Oregon Graduate Institute (United States)
P. D. Carleson, Oregon Graduate Institute (United States)
Marc K. Felisky, Oregon Graduate Institute (United States)
Craig C. Largent, Air Force Phillips Lab. (United States)

Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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