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Proceedings Paper

Coherent high-power operation of InGaAsP/InGaAs multiple-quantum-well active-grating surface-emitting amplified lasers
Author(s): Nils W. Carlson; So Kuen Liew; Raymond J. Menna; Peter D. Gardner; James T. Andrews; Jay B. Kirk; Jerome K. Butler; Alfred R. Triano; W. F. Reichert
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Paper Abstract

The design and operating characteristics of strained-layer InGaAsP/InGaAs active-grating surface-emitting amplified diode lasers are presented. For the first time, we report cw operation of an active-grating amplifier at a single wavelength of 1.7 micrometers with a cw power output in excess of 100 mW. In addition, we discuss, theoretically, the possibility of laterally scaling these devices using antiguided laser-array structures.

Paper Details

Date Published: 16 June 1993
PDF: 9 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146932
Show Author Affiliations
Nils W. Carlson, David Sarnoff Research Ctr. (United States)
So Kuen Liew, David Sarnoff Research Ctr. (United States)
Raymond J. Menna, David Sarnoff Research Ctr. (United States)
Peter D. Gardner, David Sarnoff Research Ctr. (United States)
James T. Andrews, David Sarnoff Research Ctr. (United States)
Jay B. Kirk, David Sarnoff Research Ctr. (United States)
Jerome K. Butler, Southern Methodist Univ. (United States)
Alfred R. Triano, David Sarnoff Research Ctr. (United States)
W. F. Reichert, David Sarnoff Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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