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Proceedings Paper

Short-red-wavelength, high-power, AlGaInP laser diodes
Author(s): Harvey B. Serreze; Ying-Chih Chen
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Paper Abstract

AlGaInP-based, high power laser diodes operating at wavelengths of 630 to 645 nm have been designed, fabricated, and characterized. Cw output powers approaching 1 Watt and thresholds below 400 A/cm2 have been achieved. Measurement of internal laser parameters indicates low internal loss and transparency current, high gain, and moderate internal quantum efficiency. Characteristic temperature data suggest that the lowest practical operating wavelength of similar diodes is close to 620 nm. Examination of performance as a function of cavity length indicates an optimum length in the range of 1200 micrometers .

Paper Details

Date Published: 16 June 1993
PDF: 7 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146930
Show Author Affiliations
Harvey B. Serreze, McDonnell Douglas Electronic Systems Co. (United States)
Ying-Chih Chen, CUNY/Hunter College (United States)

Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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