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Proceedings Paper

High-temperature operation of high-power InGaAlP visible laser diodes
Author(s): Gen-ichi Hatakoshi; Koichi Nittoh; Yukie Nishikawa; Kazuhiko Itaya; Masaki Okajima
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Paper Abstract

High-power InGaAlP lasers operating at high temperature have been realized by using a strained active layer, a highly doped p-cladding layer, and a long cavity structure. The maximum operating temperature has been increased to 80 degree(s)C for a 50 mW operation of transverse-mode stabilized laser diodes, and also for a 100 mW operation of broad-stripe laser diodes. This improvement in the temperature characteristics has led to a highly reliable operation at a high output power. Transverse-mode stabilized InGaAlP lasers oscillating at 698 nm have exhibited a stable operation for 2,000 hours at a high output power of 40 mW with an ambient temperature of 40 degree(s)C. A highly reliable operation of broad-stripe structure lasers has also been achieved. A stable 100 mW operation for 1,500 hours at a temperature of 50 degree(s)C was obtained for InGaAlP lasers with a stripe width of 25 micrometers .

Paper Details

Date Published: 16 June 1993
PDF: 9 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146928
Show Author Affiliations
Gen-ichi Hatakoshi, Toshiba Corp. (Japan)
Koichi Nittoh, Toshiba Corp. (Japan)
Yukie Nishikawa, Toshiba Corp. (Japan)
Kazuhiko Itaya, Toshiba Corp. (Japan)
Masaki Okajima, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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