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Proceedings Paper

Measurement of relative intensity noise of semiconductor laser arrays
Author(s): Jingchang Zhong; Baoren Zhu; Ronghui Li; Yingjie Zhao
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Paper Abstract

We report in this paper the measurement results of the relative intensity noise (RIN) in GaAs- AlGaAs laser arrays, comparing with that of single stripe lasers. The results are in agreement with the noise theory based on the rate equation. The experimental measurements include dependence of relative intensity noise on drive current, modulation frequency and temperature. The results confirm in these circumstances the theoretical prediction that the maximum of the relative intensity noise occurs when the lasers run exactly at their threshold current level.

Paper Details

Date Published: 16 June 1993
PDF: 4 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146926
Show Author Affiliations
Jingchang Zhong, Univ. of New Mexico (China)
Baoren Zhu, Changchun Institute of Optics and Fine Mechanics (China)
Ronghui Li, Changchun Institute of Optics and Fine Mechanics (China)
Yingjie Zhao, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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