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Proceedings Paper

1000-W QCW output power from surface-emitting GaAs/AlGaAs laser diode arrays
Author(s): Bernard Groussin; Francois Pitard; Alain Parent; Claude Carriere
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Paper Abstract

For the first time, quasi-continuous wave (QCW) output power level of 1000 W from monolithic surface emitting laser diodes (M-SELDs) is reported. To realize the basic structure of the laser diodes, we have developed an original 2-D structure where the epitaxial structure is made on engraved GaAs substrate and the laser facets are made by micro-cleavage technique. With a compact planar association of 10 M-SELDs of 0.1 cm2 which emits 100 W QCW each (optical power density equals 1 KW/cm2) on the same submount, a power source of 1000 W QCW has been obtained. The operating current is 150 A, the slope efficiency is 7.5 W/A and the optical divergence of the beam is lower than 20 degree(s) FWHM in the perpendicular direction.

Paper Details

Date Published: 16 June 1993
PDF: 7 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146920
Show Author Affiliations
Bernard Groussin, Thomson Hybrides (France)
Francois Pitard, Thomson Hybrides (France)
Alain Parent, Thomson Hybrides (France)
Claude Carriere, Thomson Hybrides (France)

Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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