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Proceedings Paper

High-power short-wavelength surface-emitting laser diodes
Author(s): Szutsun Simon Ou; Jane J. Yang; Michael Jansen
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Paper Abstract

We report on the first demonstration of high power, short-wavelength, in-plane, horizontal cavity ion-beam-etched surface-emitting lasers with emission wavelengths of 740 nm and 635 nm, and surface-emitting output powers of 850 mW and 170 mW from GaAlAs/GaAs and GaInP/GaAlInP laser diodes, respectively.

Paper Details

Date Published: 16 June 1993
PDF: 90 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146919
Show Author Affiliations
Szutsun Simon Ou, TRW Research Group (United States)
Jane J. Yang, TRW Research Group (United States)
Michael Jansen, TRW Research Group (United States)

Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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