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Proceedings Paper

Efficient, high-power monolithic two-dimensional surface-emitting diode laser arrays mounted in the junction-down configuration
Author(s): Michael Jansen; Szutsun Simon Ou; Jane J. Yang; Moshe Sergant; Cynthia A. Hess; Chan A. Tu; Phillip Hayashida; Dennis P. Bowler; Fernando D. Alvarez; George M. Harpole; Mark A. Emanuel
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Paper Abstract

We review in-plane surface-emitting laser diode arrays and their applications. Efficient operation of monolithic, large area (0.54 cm2, 108 emitters) two-dimensional surface- emitting GaAlAs laser diode arrays mounted junction-down on microchannel heat exchangers has been demonstrated. Devices with 1.5 micrometers thick cladding layers were operated quasi- continuous-wave to high peak output power densities (> 100 W/cm2), exhibited high power conversion efficiencies (22%), and full width emission spectra of < 4 nm at 2% - 5% duty cycles. Arrays with a 2.5 micrometers thick cladding region were operated under continuous wave conditions to 46 W/cm2 power density levels. This corresponded to a 550 W/cm2 heat flux extracted by microchannel heat exchanges.

Paper Details

Date Published: 16 June 1993
PDF: 9 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146918
Show Author Affiliations
Michael Jansen, TRW Space and Technology Group (United States)
Szutsun Simon Ou, TRW Space and Technology Group (United States)
Jane J. Yang, TRW Space and Technology Group (United States)
Moshe Sergant, TRW Space and Technology Group (United States)
Cynthia A. Hess, TRW Space and Technology Group (United States)
Chan A. Tu, TRW Space and Technology Group (United States)
Phillip Hayashida, TRW, Inc. (United States)
Dennis P. Bowler, Univ. of California/Los Angeles (United States)
Fernando D. Alvarez, TRW Space and Technology Group (United States)
George M. Harpole, TRW, Inc. (United States)
Mark A. Emanuel, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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