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Proceedings Paper

High-efficiency three-terminal laser array for optical interconnect
Author(s): Newton C. Frateschi; Hanmin Zhao; James J. Elliot; Sabeur Siala; M. Govindarajan; Richard N. Nottenburg; Paul Daniel Dapkus
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Paper Abstract

Strained InGaAs/GaAs quantum well three terminal lasers with monolithically integrated intracavity modulators were fabricated using low threshold current structures formed by the temperature engineered growth (TEG) technique. An on-off efficiency ratio of 556 with optical power contrast ratio of 7.5 was measured with a total DC power consumption of 25.3 mW. Preliminary digital modulation shows bit error rate (BER) lower than 10-16 at 500 Mb/s. A theoretical analysis of the dynamic behavior of this device shows potential operation of 6.6 Gb/s with low inter-symbol interference.

Paper Details

Date Published: 16 June 1993
PDF: 9 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146915
Show Author Affiliations
Newton C. Frateschi, Univ. of Southern California (United States)
Hanmin Zhao, Univ. of Southern California (United States)
James J. Elliot, Univ. of Southern California (United States)
Sabeur Siala, Univ. of Southern California (United States)
M. Govindarajan, Univ. of Southern California (United States)
Richard N. Nottenburg, Univ. of Southern California (United States)
Paul Daniel Dapkus, Univ. of Southern California (United States)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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