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Proceedings Paper

Realization of high-power operation in AlGaInP lasers by employing multiquantum barrier and strained active layer
Author(s): Satoshi Arimoto; Hitoshi Watanabe; Masashi Yasuda; K. Kadoiwa; Etsuji Omura; Masao Aiga; Kenji Ikeda
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Paper Abstract

CW output power in excess of 60 mW at 110 degree(s)C with a fundamental-transverse mode and stable CW operation over 3000 hrs under 30 mW at 60 degree(s)C have been realized by employing a multiquantum well (MQW) active layer with optimized compressive strain. A window-structure laser fabricated by solid phase diffusion of Zn has exhibited high-power CW operation over 150 mW keeping the fundamental-transverse-mode. Systematical approach to the high power operation has also been discussed.

Paper Details

Date Published: 16 June 1993
PDF: 8 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146913
Show Author Affiliations
Satoshi Arimoto, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Hitoshi Watanabe, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Masashi Yasuda, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
K. Kadoiwa, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Etsuji Omura, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Masao Aiga, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)
Kenji Ikeda, Mitsubishi Optoelectronic and Microwave Devices Lab. (Japan)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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