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Proceedings Paper

Localization of crystallographic defects in failed laser diodes using optical probes
Author(s): Laura Serra; Giuseppe A. Azzini; R. De Franceschi; M. Liberatore; M. Mancini; Guido Manzone; Paolo Montangero
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Paper Abstract

A precise localization of dark line defects in failed AlGaAs/GaAs laser diodes has been achieved by means of scanning optical microscope (SOM) techniques. The analytical scheme has been based on optical beam induced current (OBIC) and photoluminescence (PL) at three photon probes and different device bias voltages. The imaging analysis has been associated to a progressive chemical etching of the semiconductor material. Numerical simulation of the experiment has been performed for results interpretation. Results are in good agreement with previously published theories and with TEM analysis. The proposed analytical procedure can be applied to a wide variety of devices.

Paper Details

Date Published: 16 June 1993
PDF: 10 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146911
Show Author Affiliations
Laura Serra, CSELT (Italy)
Giuseppe A. Azzini, CSELT (Italy)
R. De Franceschi, CSELT (Italy)
M. Liberatore, CSELT (Italy)
M. Mancini, CSELT (Italy)
Guido Manzone, CSELT (Italy)
Paolo Montangero, CSELT (Italy)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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