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Proceedings Paper

Noise of 980-nm InGaAs/GaAs strained quantum-well lasers and correlation with aging
Author(s): Bernard Pierre Orsal; Jean-Marie Peransin; K. Daulasim; Philippe Signoret; Pascal Y. Devoldere; M. Robinet; Mitsuo Fukuda
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Paper Abstract

The longitudinal mode hopping and the related terminal electrical noise in InGaAs/GaAs ridge single quantum well (SQW) lasers are investigated. It is found that electrical mode hopping has a Lorentzian dependence. The correlation with the optical noise is experimentally shown for low and medium frequencies.

Paper Details

Date Published: 16 June 1993
PDF: 16 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146909
Show Author Affiliations
Bernard Pierre Orsal, Univ. Montpellier II (France)
Jean-Marie Peransin, Univ. Montpellier II (France)
K. Daulasim, Univ. Montpellier II (France)
Philippe Signoret, Univ. Montpellier II (France)
Pascal Y. Devoldere, Ctr. National d'Etudes des Telecommunications (France)
M. Robinet, Ctr. National d'Etudes des Telecommunications (France)
Mitsuo Fukuda, NTT Optoelectronics Labs. (Japan)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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