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Proceedings Paper

Are InAlGaAs strained-layer quantum-well lasers more reliable?
Author(s): Richard F. Murison; Alan H. Moore; Nigel Holehouse; Shuyen R. Lee
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Paper Abstract

Laser diodes and superluminescent diodes have been fabricated using epitaxial structures employing a strained quantum well of InAlGaAs. These devices emit at wavelengths in the 800 - 900 nm range commonly addressed using unstrained GaAs quantum well structures. Results are presented which indicate that the strained layer devices exhibit a marked immunity from sudden unexpected ('freak') failure modes.

Paper Details

Date Published: 16 June 1993
PDF: 7 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146908
Show Author Affiliations
Richard F. Murison, EG&G Canada Ltd. (Canada)
Alan H. Moore, EG&G Canada Ltd. (Canada)
Nigel Holehouse, EG&G Canada Ltd. (Canada)
Shuyen R. Lee, EG&G Canada Ltd. (Canada)

Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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