Share Email Print

Proceedings Paper

Effect of strain on 1.5-um quantum-well lasers
Author(s): Yau Zou; Jules S. Osinski; Piotr A. Grodzinski; Paul Daniel Dapkus; William C. Rideout; Wayne F. Sharfin; F. David Crawford
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Physical parameters contributing to the threshold current and its temperature characteristics of 1.5 micrometers semiconductor lasers have been separately measured in lattice matched and compressively strained lasers. It is found that the reduction of threshold current density in strained devices is attributed to the reduction of Auger recombination, intervalence band absorption and transparency carrier density brought about by the introduction of strain. It is also found that the temperature sensitivity of both lattice matched and strained devices is dominated by the strong differential gain change with temperature, instead of Auger recombination.

Paper Details

Date Published: 16 June 1993
PDF: 12 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146902
Show Author Affiliations
Yau Zou, Univ. of Southern California (United States)
Jules S. Osinski, Univ. of Southern California (United States)
Piotr A. Grodzinski, Univ. of Southern California (United States)
Paul Daniel Dapkus, Univ. of Southern California (United States)
William C. Rideout, GTE Labs. Inc. (United States)
Wayne F. Sharfin, GTE Labs. Inc. (United States)
F. David Crawford, GTE Labs. Inc. (United States)

Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

© SPIE. Terms of Use
Back to Top