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Proceedings Paper

TE/TM mode switching of GaAsP strained quantum-well laser diodes
Author(s): Hidenao Tanaka; Jun-ichi Shimada
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Paper Abstract

This paper demonstrates TE/TM mode switching in GaAsP/AlGaAs tensilely strained quantum-well laser diodes (LDs) with multiple electrodes. The quantum-well layers are grown by low-pressure metal organic vapor phase epitaxy. For a 250-micrometers -long cavity, the threshold current density of this LD wafer at room temperature is about 1.6 kA/cm2. With a long cavity these LDs operate in the TM mode, but the TE mode dominates when the cavity is shorter than 200 micrometers . TE/TM mode switching is obtained in a two-electrode laser with electrodes 150 micrometers and 80 micrometers long. When current is injected into both electrodes this LD oscillates at 790 nm in the TM mode and with a threshold current of 40 mA. When current is injected only into the longer electrode, however, it oscillates at 800 nm in the TE mode and absorption at the region under the shorter electrode increases the threshold current to 80 mA. For both kinds of oscillation the suppression ratio is greater than 10 dB. This LD operates in the fundamental mode over an injection-current range of several milliwatts.

Paper Details

Date Published: 16 June 1993
PDF: 8 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146901
Show Author Affiliations
Hidenao Tanaka, NTT Interdisciplinary Research Labs. (Japan)
Jun-ichi Shimada, NTT Interdisciplinary Research Labs. (Japan)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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