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Proceedings Paper

High-power InGaAs-GaAs 1064 nm strained-layer lasers by metalorganic chemical vapor deposition (MOCVD)
Author(s): Timothy M. Cockerill; David V. Forbes; James J. Coleman; K. J. Beernink; Richard F. Murison; Alan H. Moore
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Paper Abstract

We describe the design, growth by atmospheric pressure metalorganic chemical vapor deposition (MOCVD), processing and characterization of single quantum well separate confinement strained layer InGaAs-GaAs quantum well lasers designed for high power operation at emission wavelengths near 1064 nm. Threshold current density is reduced by 39% for long cavity devices through design optimization. Broad area lasers operate at high cw (> 5 W) and pulsed (> 20 W) powers, with low threshold current density and high power conversion efficiency. Index guided ridge waveguide lasers show stable single spatial mode operation over a wide range of output power and temperature.

Paper Details

Date Published: 16 June 1993
PDF: 5 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146900
Show Author Affiliations
Timothy M. Cockerill, Univ. of Illinois/Urbana-Champaign (United States)
David V. Forbes, Univ. of Illinois/Urbana-Champaign (United States)
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)
K. J. Beernink, Microelectronics Ctr. (United States)
Richard F. Murison, EG&G Canada Ltd. (Canada)
Alan H. Moore, EG&G Canada Ltd. (Canada)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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