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Proceedings Paper

Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources
Author(s): Theresa Sze; A. Mohammed Mahbobzadeh; Julian Cheng; Stephen D. Hersee; Marek Osinski; Steven R. J. Brueck; Kevin J. Malloy
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Paper Abstract

We compare vertical-cavity surface emitting lasers grown by molecular beam epitaxial methods to those grown by metal organic chemical vapor deposition methods as sources for wavelength-division multiplexing systems.

Paper Details

Date Published: 16 June 1993
PDF: 6 pages
Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); doi: 10.1117/12.146897
Show Author Affiliations
Theresa Sze, Univ. of New Mexico (United States)
A. Mohammed Mahbobzadeh, Univ. of New Mexico (United States)
Julian Cheng, Univ. of New Mexico (United States)
Stephen D. Hersee, Univ. of New Mexico (United States)
Marek Osinski, Univ. of New Mexico (United States)
Steven R. J. Brueck, Univ. of New Mexico (United States)
Kevin J. Malloy, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 1850:
Laser Diode Technology and Applications V
Daniel Renner, Editor(s)

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