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Proceedings Paper

Novel curve-fitting technique for characterization of high-resistivity semiconductor materials
Author(s): Sridhar Panigrahi; Vishnu K. Lakdawala; Lucy M. Thomas-Harrington; Ralf Peter Brinkmann
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Paper Abstract

A novel technique for deep level characterization of high-resistivity semiconductor materials, mainly GaAs has been developed. The technique analyzes the current transients generated by photo induced current transient spectroscopy (PICTS) using a digital data acquisition approach. It is observed that by using the curve fitting technique closely spaced traps within the bandgap could be separately identified and characterized. In addition, the multiple decay time constants obtained from curve fitting consists of sum of exponentials throughout the temperature range centered around a peak obtained from the PICTS spectrum. Each decay time constant (mode) around the specified temperature range represents a trap energy level present in the sample. Since the decay time constants are obtained directly from the transients, trap parameters calculated employing the curve fitting method are more accurate and reliable than those obtained from the two-gated rate window method. The method has been used to characterize high-resistivity materials of interest to optically activated switches and a comparative analysis is reported.

Paper Details

Date Published: 9 June 1993
PDF: 10 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146563
Show Author Affiliations
Sridhar Panigrahi, Old Dominion Univ. (United States)
Vishnu K. Lakdawala, Old Dominion Univ. (United States)
Lucy M. Thomas-Harrington, Old Dominion Univ. (United States)
Ralf Peter Brinkmann, Siemens AG (Germany)

Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

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