Share Email Print

Proceedings Paper

GaAs PCSS: high-gain switching and device reliability
Author(s): Fred J. Zutavern; Guillermo M. Loubriel; Dan L. McLaughlin; Marty W. O'Malley; Wesley D. Helgeson; Gary J. Denison
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Characteristics of GaAs photoconductive semiconductor switches (PCSS) during the initiation and sustaining phases of high gain switching are studied in this paper. Infrared electro-photo luminescence data are present which show current filaments during high gain switching mode. Triggering of these devices with multiple fiber optics is demonstrated and the implications for high average current density switching are discussed. Switch jitter with high field lateral PCSS has been tested and its impact on multiswitch systems is explored. Results from high repetition rate device lifetime testing are also reported. Lateral switches with several types of contacts (including: refractory metallizations, diffused and ion-implanted Ohmic layers) have been fabricated and tested. Switch characteristics and lifetime results will be discussed for each of these fabrication schemes.

Paper Details

Date Published: 9 June 1993
PDF: 5 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146562
Show Author Affiliations
Fred J. Zutavern, Sandia National Labs. (United States)
Guillermo M. Loubriel, Sandia National Labs. (United States)
Dan L. McLaughlin, Sandia National Labs. (United States)
Marty W. O'Malley, Sandia National Labs. (United States)
Wesley D. Helgeson, Sandia National Labs. (United States)
Gary J. Denison, Sandia National Labs. (United States)

Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

© SPIE. Terms of Use
Back to Top