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Proceedings Paper

Thermal ionization model for the sustaining phase of lock-on in GaAs
Author(s): Harold P. Hjalmarson; Fred J. Zutavern; Guillermo M. Loubriel; Malcolm T. Buttram; Albert G. Baca; Louis A. Romero
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Paper Abstract

Thermal ionization of electrons and holes is proposed as an explanation for the sustained phase of lock-on in semi-insulating GaAs. In this mechanism, thermal ionization leads to a current instability which drives the formation of current filaments. The model predicts bistable states: either a highly conductive on-state or weakly conductive off-state. The model predicts that a transition from the off-state to a filamentary-current on-state can be triggered by illumination in agreement with experiments using photoexcitation.

Paper Details

Date Published: 9 June 1993
PDF: 9 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146558
Show Author Affiliations
Harold P. Hjalmarson, Sandia National Labs. (United States)
Fred J. Zutavern, Sandia National Labs. (United States)
Guillermo M. Loubriel, Sandia National Labs. (United States)
Malcolm T. Buttram, Sandia National Labs. (United States)
Albert G. Baca, Sandia National Labs. (United States)
Louis A. Romero, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

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