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Proceedings Paper

Photoconductive measurements on P-type 6H-SiC
Author(s): Stephen E. Saddow; Pak Shing Cho; Julius Goldhar; John Palmour; Chi Hsiang Lee
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Paper Abstract

The optoelectronic properties of 6-H silicon carbide (6H-SiC) were investigated using lateral and vertical photoconductive switches. We report the measurement of photovoltaic and photoconductive effects for both geometries and at several wavelengths near the 6H-SiC absorption edge. The carrier lifetime in p-type 6H-SiC is also reported. Although the devices possess dark resistances on the order of 10 (Omega) , the switching efficiency of the vertical switches approached 32 percent, while the resistance of the lateral devices could be reduced by 50 percent with 200 (mu) J of laser radiation at (lambda) equals 337 nm. In addition, we measured photoconductivity in the vertical switches with a device static powers dissipation exceeding 11 Watts. Although the device was glowing from the high level of dc power being dissipated, only the switch mount was damaged. 6H-SiC is indeed a high-temperature optoelectronic material.

Paper Details

Date Published: 9 June 1993
PDF: 7 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146557
Show Author Affiliations
Stephen E. Saddow, Army Research Lab. (United States)
Pak Shing Cho, Univ. of Maryland/College Park (United States)
Julius Goldhar, Univ. of Maryland/College Park (United States)
John Palmour, CREE Research Inc. (United States)
Chi Hsiang Lee, Univ. of Maryland/College Park (United States)

Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

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