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Proceedings Paper

Investigation of the temperature and electric field dependence of a GaAs microwave photoconductive switch
Author(s): Stephen E. Saddow; Bruno J. Thedrez; Sheng-Lung L. Huang; Timothy J. Mermagen; Chi Hsiang Lee
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Paper Abstract

The on-resistance of a GaAs coplanar waveguide-photoconductive switch was characterized as a function of laser photon energy, switch temperature, and applied dc electric field. An electric-field-dependent resonance at photon energies near the GaAs energy band-gap edge has been observed. This resonant behavior is believed to be caused by a competition between carrier recombination in the switch bulk and carrier sweep-out effects near the switch surface. This field-induced resonance was verified with 5, 10 and 20 micrometers switch gaps that were fabricated on three separate semi-insulating GaAs wafers. For fixed-wavelength laser sources, it has been shown that one can optimize the optical coupling by varying the switch temperature. The switch resistance decreased by a factor of three as a result of an increase in the switch temperature of 20 degree(s)C at photon energies near the absorption edge. A conductive-mode plasma model has been developed that adequately predicts the nonresonant switch behavior.

Paper Details

Date Published: 9 June 1993
PDF: 8 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146555
Show Author Affiliations
Stephen E. Saddow, Army Research Lab. (United States)
Bruno J. Thedrez, Univ. of Maryland/College Park (United States)
Sheng-Lung L. Huang, Univ. of Maryland/College Park (United States)
Timothy J. Mermagen, Army Research Lab. (United States)
Chi Hsiang Lee, Univ. of Maryland/College Park (United States)


Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

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