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Proceedings Paper

Simple model of electromagnetic-wave-induced avalanching in semiconductors
Author(s): Maurice Weiner; Lawrence E. Kingsley; A. H. Kim; Robert J. Youmans
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Paper Abstract

A simple transmission line model, which seeks to explain phenomena associated with avalanche/displacement current waves in semiconductors, is discussed. The model relies on breaking up the semiconductor drift space into small cells, each of which contains a transmission line element so as to allow an electromagnetic wave to propagate away from the generated plasma. The transmission line element also serves as the energy storage element. A time varying resistor controls the conductivity, induced by either a light signal or an avalanche. As expected, the model points out the importance of triggering an avalanche/displacement current wave in regions where the static field is high. Under certain conditions the model predicts a growing electromagnetic wave with sufficient amplitude to sustain avalanching. The model offers a possible explanation of the observed fast risetime pulses resulting from either optical or avalanche excitation of a small, spatially limited region of the semiconductor region.

Paper Details

Date Published: 9 June 1993
PDF: 9 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146547
Show Author Affiliations
Maurice Weiner, U.S. Army Research Lab. (United States)
Lawrence E. Kingsley, U.S. Army Research Lab. (United States)
A. H. Kim, U.S. Army Research Lab. (United States)
Robert J. Youmans, U.S. Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

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