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Proceedings Paper

Influence of fabrication techniques on gallium arsenide switch photoconductivity
Author(s): Lucy M. Thomas-Harrington; Vishnu K. Lakdawala
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Paper Abstract

Photoconductivity of copper compensated, silicon doped GaAs (GaAs:Si:Cu) which is used as a bulk optically controlled semiconductor switch (BOSS) material is studied. Copper is diffused into GaAs:Si using a spin-on dopant source (Cu-doped silicon dioxide), and a leaky tube diffusion system for annealing. The switch photoconductivity is compared to that of samples processed using closed tube diffusion systems, where the Cu source for diffusion is a Cu film deposited by thermal evaporation on one surface of the GaAs wafer. High efficiency switch material is obtained by using the leaky tube technique and low power semiconductor laser is used as the excitation source for the switch photoconductivity measurements.

Paper Details

Date Published: 9 June 1993
PDF: 8 pages
Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); doi: 10.1117/12.146539
Show Author Affiliations
Lucy M. Thomas-Harrington, Old Dominion Univ. (United States)
Vishnu K. Lakdawala, Old Dominion Univ. (United States)


Published in SPIE Proceedings Vol. 1873:
Optically Activated Switching III
R. Aaron Falk, Editor(s)

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